Novel phase transition for XSnN2 (X = Mg, Zn) under uniaxial compression

Theoretical and experimental approaches for the determination of functional properties of MgSnN2 thin films

(2022) Fahad Alnjiman et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

The pressure effect on the structural, elastic, and mechanical properties of orthorhombic MgSiN2 from first-principles calculations

(2021) Atipong Bootchanont et al.   SOLID STATE COMMUNICATIONS

Stress‐Driven Phase Transitions of SrI 2 : A First‐Principles Investigation

(2020) Jingjing Dai et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

A magnetically controllable metastable LiSeHFeO isomer: an ab-initio investigation from bulk to film

(2020) Qingguo Feng   Journal of Materials Science

Ternary nitride semiconductors in the rocksalt crystal structure

(2019) Sage R. Bauers et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Quasiparticle self-consistent GW band structures of Mg-IV-N2 compounds: The role of semicore d states

(2019) Sai Lyu et al.   SOLID STATE COMMUNICATIONS

Synthesis of a Novel Rocksalt-Type Ternary Nitride Semiconductor MgSnN2 Using the Metathesis Reaction under High Pressure

(2019) Fumio Kawamura et al.   EUROPEAN JOURNAL OF INORGANIC CHEMISTRY

BoltzTraP2 , a program for interpolating band structures and calculating semi-classical transport coefficients

(2018) Georg K.H. Madsen et al.   COMPUTER PHYSICS COMMUNICATIONS

Epitaxial Growth of Bandgap Tunable ZnSnN2 Films on (0001) Al2O3 Substrates by Using a ZnO Buffer

(2018) Duc Duy Le et al.   CRYSTAL GROWTH & DESIGN

Fe-N system at high pressure reveals a compound featuring polymeric nitrogen chains

(2018) M. Bykov et al.   Nature Communications

Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2

(2017) M. Råsander et al.   JOURNAL OF APPLIED PHYSICS

Topological transitions of the Fermi surface of osmium under pressure: an LDA+DMFT study

(2017) Qingguo Feng et al.   NEW JOURNAL OF PHYSICS

Synthesis, structure, and optoelectronic properties of II–IV–V2 materials

(2017) Aaron D. Martinez et al.   Journal of Materials Chemistry A

Materials discovery at high pressures

(2017) Lijun Zhang et al.   Nature Reviews Materials

Conduction-band effective mass and bandgap of ZnSnN2 earth-abundant solar absorber

(2017) Xiang Cao et al.   Scientific Reports

Synthesis of ZnSnN2crystals via a high-pressure metathesis reaction

(2016) F. Kawamura et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Accurate first-principles structures and energies of diversely bonded systems from an efficient density functional

(2016) Jianwei Sun et al.   Nature Chemistry

Electronic structure of the high and low pressure polymorphs of MgSiN2

(2016) M Råsander et al.   Materials Research Express

Electronic, optical and bonding properties of MgYZ2 (Y=Si, Ge; Z=N, P) chalcopyrites from first principles

(2014) Sibghat-ullah et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Necessary and sufficient elastic stability conditions in various crystal systems

(2014) Félix Mouhat et al.   PHYSICAL REVIEW B

Synthesis, lattice structure, and band gap of ZnSnN2

(2013) Paul C. Quayle et al.   MRS Communications

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

High-pressure high-temperature synthesis and structure of β-MgSiN2

(2011) Miria Andrade et al.   Physica Status Solidi-Rapid Research Letters

Structural, electronic and optical properties of II–IV–N2 compounds (II = Be, Zn; IV = Si, Ge)

(2007) V. L. Shaposhnikov et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS