期刊
JOURNAL OF RAMAN SPECTROSCOPY
卷 47, 期 8, 页码 884-887出版社
WILEY
DOI: 10.1002/jrs.4912
关键词
Deep UV; Resonance Raman; Hexagonal III-nitride; Wide Bandgap Semiconductors; Electron-phonon Coupling
类别
资金
- National Natural Science Foundation of China (NSFC) [21373209]
- National Major Scientific Instruments and Equipments Development Project (NSFC) [2152780065]
Electron-phonon coupling (EPC) is an important issue in semiconductor physics because of its significant influence on the optical and electrical properties of semiconductors. In this work, the EPC in wide bandgap semiconductors including hexagonal BN and AlN was studied by deep UV resonance Raman spectroscopy. Up to fourth-order LO phonons are observed in the resonance Raman spectrum of hexagonal AlN. By contrast, only the prominent emission band near the band-edge and the Raman band attributed to E-2g mode are detected for hexagonal BN with deep UV resonance excitation. The different behavior in resonant Raman scattering between the III-nitrides reflects their large difference in EPC. The mechanism for EPC in hexagonal BN is the short-range deformation interaction, while that in hexagonal AlN is mainly associated with the weak long-range Frohlich interaction. Copyright (c) 2016 John Wiley & Sons, Ltd.
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