New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f noise behavior of the hot carrier induced defects in highspeed polysilicon emitter bipolar transistors (PE-BJTs) and SiGe HBTs. Here, the comparative results before and after hot carrier degradation reveal that low frequency noise spectra are not correlated with the density and distribution of the interfacial defects, which related to Si dangling bonds reside at the SiO2/Si interface in PE-BJTs and SiGe HBTs.

Automated summary

Low frequency noise is a non-destructive technique used to evaluate the oxide-semiconductor interface and characterize electronic device's structure and reliability. This study analyzed the abnormal behavior of 1/f noise induced by hot carrier defects in PE-BJTs and SiGe HBTs. The results show that low frequency noise spectra are unrelated to the density and distribution of interfacial defects, but are associated with Si dangling bonds at the SiO2/Si interface in PE-BJTs and SiGe HBTs.