期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 49, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/12/125602
关键词
thin-film solar cell; buffer layer; chalcogenides; CZTSe; Cd-free; ZnS(O,OH); light soaking
资金
- Seventh Framework Programme (FP7) under the project KESTCELLS [FP7-PEOPLE-2012-ITN-316488]
- NOVAZOLAR project from the SOLARERANET International program (Spanish MINECO) [PCIN-2013-193]
- European Regional Development Founds (ERDF, FEDER Programa Competitivitat de Catalunya)
- Government of Spain [RYC-2011-09212]
- [PTA2012-7852-A]
High-performance kesterite-(CZTSe-) based solar cell devices usually employ an absorber/ buffer heterostructure using toxic CdS deposited by chemical bath deposition (CBD) as a buffer layer. This is due to the favourable spike-like conduction band alignment of the CdS buffer and CZTSe absorber. ZnS(O, OH) buffer layers provide a promising nontoxic alternative. Here, variation of the thiourea concentration in the CBD of ZnS(O, OH) buffer layers and its influence on device performances of pure selenide CZTSe heterostructure solar cells is presented. Furthermore, the influence of buffer layer deposition conditions on light-induced metastabilities is discussed. A ZnS(O, OH) buffer layer deposited with a high thiourea concentration leads to distorted illuminated J-V curves as expected for devices with unfavourably high spike-like conduction band alignment between the buffer and CZTSe absorber. By adjusting the thiourea concentration J-V curve distortions can be reduced. An optimized CBD process leads to a device efficiency of up to 6.5% after light soaking, which is comparable to the efficiency of a reference device that employs CdS as the buffer layer (6.9%).
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