期刊
SMALL
卷 19, 期 16, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202207641
关键词
2D materials; broadband photodetectors; group-10 transition metal dichalcogenides; optoelectronic devices
This review presents the latest developments in fabricating broadband photodetectors based on conventional 2D transition metal dichalcogenides (TMDCs). It focuses on the recent progress in group-10 TMDCs in terms of lattice structure and synthesis techniques. The review also discusses the applications of group-10 TMDCs in nanoelectronics and optoelectronics, and provides perspectives for next-generation broadband photodetectors.
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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