Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid-Infrared Operation

Identifying interfacial properties and discussing optical properties of antimony-based type II superlattices are the key factors for developing high performance of infrared optoelectronic devices. Herein, the multi-epitaxy-layered structure of a mid-wavelength-responsive infrared detector with an InAs/InAsSb superlattice as an active area layer is grown and investigated. High-resolution X-ray diffraction, high-resolution transmission electron microscopy, and the geometric phase analysis indicate epitaxial layers of high crystalline quality and small lattice mismatches. The electric field results obtained by differential phase contrast scanning transmission electron microscopy further confirm the sharp interface states and good periodic structure of the as-grown samples. The photoluminescence spectrum shows that the photoluminescence signal center is 5.4 mu m at 75 K, even at 320 K, the sample still maintains a photoluminescence signal of 6.2 mu m.

Automated summary

Identifying interfacial properties and discussing optical properties of antimony-based type II superlattices are crucial for the development of infrared optoelectronic devices. In this study, a multi-epitaxy-layered structure of an infrared detector with an InAs/InAsSb superlattice as an active area layer was grown and examined. The results of various analyses, including X-ray diffraction, transmission electron microscopy, and differential phase contrast scanning transmission electron microscopy, confirmed the high quality and small lattice mismatches of the epitaxial layers. The photoluminescence spectrum demonstrated a strong photoluminescence signal at 5.4 μm at 75 K and 6.2 μm even at 320 K.