4.5 Article

Electron tunneling through HgTe/CdTe quantum wells with all-electrical superlattice structures

期刊

PHYSICA B-CONDENSED MATTER
卷 646, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.physb.2022.414344

关键词

HgTe; CdTe quantum wells; Electrical potential modulations; Superlattice structures; Fabry-P?rot resonance; Rashba spin-orbit interaction

资金

  1. Zhongshan Polytechnic High-level Talents Project
  2. MOST
  3. National Natural Science Foundation of China (NSFC)
  4. Col-lege Innovation Project of Guangdong Province
  5. Social Public Welfare and Basic Research Project of Zhongshan City
  6. [KYG2102]
  7. [2021YFA1200502]
  8. [2018YFA0306101]
  9. [12174423]
  10. [11974340]
  11. [2020KTSCX329]
  12. [2020B2044]

向作者/读者索取更多资源

In this study, we theoretically investigate the electron transport through HgTe/CdTe quantum well heterostructure interfaces and discover the unique Fabry-Perot resonant tunneling. We also analyze the methods to adjust the transport properties and enhance the resonance tunneling through electrical modulation. This research is of great significance for controlling electron transport in two-dimensional topological insulators from a device application perspective.
We theoretical investigate the electron transport through HgTe/CdTe quantum wells (QWs) heterostructure interfaces with periodic electrical potential modulations in this work. We find Fabry-Perot resonant tunneling with perfect transmission through a two dimensional topological insulator superlattice structure in HgTe/CdTe QWs, which is supposed to be experimentally observable. This unique feature indicates potential applications of Fabry-Perot interferometers device. The transport properties of electrons tunneling through the superlattice structures can be adjusted by tuning the Fermi energy, electron incident angle, the electrical modulation numbers and modulation amplitude. We also find the enhanced Fabry-Perot resonance tunneling due to the electric-induced Rashba spin-orbit interaction (RSOI). This all-electrical mechanism may pave a realistic way to control the electron transport in two dimension topological insulator from a device application perspective.

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