4.6 Article

Temperature-dependent photoluminescence properties of water-soluble CuInS2 and CuInS2/ZnS quantum dots

期刊

JOURNAL OF APPLIED PHYSICS
卷 132, 期 19, 页码 -

出版社

AIP Publishing
DOI: 10.1063/5.0105290

关键词

-

资金

  1. Japan Society for the Promotion of Science (KAKENHI) [17H03538, 20H02549]
  2. JST OPERA Program [JPMJOP1843]

向作者/读者索取更多资源

In this study, the photoluminescence (PL) origin of water-soluble CuInS2 (CIS) quantum dots (QDs) was investigated by preparing CIS and CIS/ZnS QDs and studying their temperature dependence. The results showed that the PL intensity of both CIS and CIS/ZnS QDs increased with temperature, which could be quantitatively explained by thermally activated nonradiative recombination processes. Additionally, the temperature dependence of the Stokes shift and PL decay time differed between CIS and CIS/ZnS QDs, with the unusual behavior of CIS/ZnS QDs attributed to carrier localization at the core/shell interface at low temperatures. The temperature dependence of the PL decay time of CIS/ZnS QDs could be quantitatively explained by a phenomenological rate equation model considering carrier localization at low temperatures.
Although the photoluminescence (PL) of oil-soluble CuInS2 (CIS) quantum dots (QDs) has been widely investigated, the origin of PL in water-soluble CIS QDs is less well understood. Elucidation of the PL origin of water-soluble CIS QDs is an important issue in applications such as bioimaging and optical materials. Herein, we prepared CIS and CIS/ZnS QDs using a hydrothermal method and systematically investigated the temperature dependence of their PL properties. For both CIS and CIS/ZnS QDs, the temperature dependence of the PL intensity could be quantitatively understood by considering thermally activated nonradiative recombination processes. In contrast, the Stokes shift and PL decay time of the CIS/ZnS QDs showed a significantly different temperature dependence than those of the CIS QDs. This unusual temperature-dependent behavior of the CIS/ZnS QDs was attributed to carrier localization at the core/shell interface at low temperatures. The temperature dependence of the PL decay time of the CIS/ZnS QDs could be quantitatively explained using a phenomenological rate equation model that considered carrier localization at low temperatures. Published under an exclusive license by AIP Publishing.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据