4.7 Article

Mid-infrared luminescence from Sn-modified PbSe quantum dots in silicate glasses

期刊

JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 431, 期 -, 页码 93-96

出版社

ELSEVIER
DOI: 10.1016/j.jnoncrysol.2015.04.010

关键词

Quantum dots; Photoluminescence; Semiconductor band gap; Lead selenide

资金

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2014R1A1A2002789]
  2. Priority Research Center through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2009-0094036]

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Infrared photoluminescence (PL) properties of Sn-modified PbSe quantum dots (QDs) in silicate glass were investigated. The QDs' sizes were controlled by changing the heat treatment temperatures. The longest absorption peak from Sn-modified PbSe QDs was centered at 2590 nm, and the PL band extended to 2650 nm. X-ray diffraction peaks indicated that the PbSe QDs formed in the glass matrix although low Sn content resulted in no obvious difference between PbSe QDs and Sn-modified PbSe QDs. Sn was found in QDs that proves the incorporation of Sn into PbSe QDs. The proposed composition of the Sn-modified PbSe QDs was Pb0.92Sn0.08Se with a band gap of similar to 0.13 eV; the small amount of Sn changed the energy structure of QDs, narrowed the band-gap, and increased the PL emission wavelength. (C) 2015 Elsevier B.V. All rights reserved.

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