Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors

标题
Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors
作者
关键词
-
出版物
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 16, Issue 8, Pages 8618-8621
出版商
American Scientific Publishers
发表日期
2016-07-05
DOI
10.1166/jnn.2016.12523

向作者/读者发起求助以获取更多资源

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started