4.2 Article

Characterization of Zn(O,S) Buffer Layers for Cu(In,Ga)Se2 Solar Cells

期刊

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 16, 期 5, 页码 5378-5383

出版社

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2016.12199

关键词

Zn(O,S) Thin Film; RF Sputtering; Cu(InGa)Se-2 Film; Buffer Layer

资金

  1. Inha University

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Zn(O,S) thin films were deposited using a ZnS target under Ar/O-2 gases by radio-frequency magnetron sputtering. As the O-2 concentration increased, the deposition rates of the Zn(O, S) films decreased due to increase of O-. The crystalline structure of Zn(O, S) was maintained at up to 0.6% O-2, while the films became unstable at the condition exceeding 0.8% O-2. This was attributed to incomplete nucleation and film growth on the substrate at the room temperature. Additionally, optical emission spectroscopy analysis indicated that an increased O- intensity at high O-2 concentration was responsible for the slow deposition rate and increased oxygen concentration of the films. X-ray diffraction and scanning electron microscopy revealed the formation of a Zn(O, S) crystal structure with partial substitution of O for S and uniform and dense grains of the films. X-ray photoelectron spectroscopy showed that the Zn(O,S) films have a uniform composition of each element and consisted of a mixed crystal structure of Zn(O,S) with Zn-O bonding. Overall, the results of this study confirmed that Zn(O,S) films deposited by radio-frequency sputtering using Ar/O-2 gas at room temperature can be applied to Cu(In,Ga)Se-2 solar cells as a buffer layer.

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