Reconfiguring band-edge states and charge distribution of organic semiconductor–incorporated 2D perovskites via pressure gating

标题
Reconfiguring band-edge states and charge distribution of organic semiconductor–incorporated 2D perovskites via pressure gating
作者
关键词
-
出版物
Science Advances
Volume 8, Issue 44, Pages -
出版商
American Association for the Advancement of Science (AAAS)
发表日期
2022-11-03
DOI
10.1126/sciadv.add1984

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