Variation of structural, optical, dielectric and magnetic properties of SnO2 nanoparticles

We report effect of oxygen vacancies on band gap narrowing, enhancement in electrical conductivity and room temperature ferromagnetism of SnO2 nanoparticles synthesized by simple chemical precipitation approach. As the calcination temperature is elevated from 400 to 800 A degrees C, the average particle size increases from 12.26 to 34.43 nm, with enhanced grain growth and crystalline quality. At low temperatures, these nanoparticles are in a rather oxygen-poor state revealing the presence of many O vacancies and Sn interstitials in SnO2 nanoparticles as in this case Sn+2 is not oxidized completely to Sn+4 and small sized nano particles have more specific surface area, hence defects are more prominent. The oxygen content increases steadily with increasing temperature, with the Sn:O atomic ratio very near to the stoichiometric value of 1:2 at high temperatures suggesting the low density of defects. The optical band gap energies of all SnO2 nanoparticles are in the visible light region, decreasing from 2.89 to 1.35 eV, while room temperature ferromagnetism and electrical conductivity are enhanced with reduced temperatures. The dielectric constant (epsilon(r)) exhibited dispersion behaviour and the Debye's relaxation peaks were observed in tan delta. The variation of dielectric properties and ac conductivity revealed that the dispersion is due to Maxwell-Wagner interfacial polarization and hopping of charge carriers between Sn+2/Sn+4. The narrowed band gap energies and enhanced ferromagnetism are mainly attributed to the increase of defects density (e.g., oxygen vacancies). The presence of oxygen vacancies is confirmed by EDX, Raman, PL, XPS, and UV-Vis spectra. The band gap of 1.35 eV is the smallest value for SnO2 reported so far. This rather small band gap, enhanced conductivity and room temperature ferromagnetism demonstrate that SnO2 nanoparticles are very promising in the visible light photo catalysis and optoelectronic devices.