4.8 Article

Integrated Pockels laser

期刊

NATURE COMMUNICATIONS
卷 13, 期 1, 页码 -

出版社

NATURE PORTFOLIO
DOI: 10.1038/s41467-022-33101-6

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资金

  1. Defense Advanced Research Projects Agency (DARPA) LUMOS program [HR001-20-2-0044]
  2. Defense Threat Reduction Agency-Joint Science and Technology Office for Chemical and Biological Defense [HDTRA11810047]
  3. National Science Foundation (NSF) [ECCS-1810169, ECCS-1842691, OMA-2138174]
  4. Cornell Center for Materials Research (National Science Foundation) [DMR-1719875]
  5. Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (National Science Foundation) [ECCS-1542081]

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On-chip integration of laser systems has led to significant developments in various applications such as LIDAR and AR/VR. In this study, the authors achieved fast on-chip configurability of a narrow linewidth laser by utilizing the Pockels effect in an integrated semiconductor platform. The integrated laser demonstrated record-high frequency modulation speed and fast switching capability, as well as the ability to co-lase at infrared and visible frequencies, making it a promising solution for applications in LiDAR, microwave photonics, atomic physics, and AR/VR.
On-Chip integration of laser systems led to impressive development in many field of application like LIDAR or AR/VR to cite a few. Here the authors harness Pockels effect in an integrated semiconductor platform achieving fast on-chip configurability of a narrow linewidth laser. The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 x 10(18) Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.

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