Studying the Atomic Layer Deposition of Molybdenum Oxide and Titanium-Molybdenum Oxide Films Using Quartz Crystal Microbalance

A study is performed of the thermal atomic layer deposition (ALD) of molybdenum oxide (MoOx) films using MoOCl4 and H2O and titanium-molybdenum oxide (TixMoyOz) thin films using TiCl4, MoOCl4, and H2O. Film growth is investigated via in situ quartz crystal microbalance (QCM) in the 115 to 180 degrees C range of temperatures. ALD processes are considered for TixMoyOz films with different ratios of TiCl4-H2O and MoOCl4-H2O subcycles in a supercycle. The linear growth of a film upon an increase in the number of ALD cycles is in all cases established. The surface reactions of halides and H2O are shown to be of a self-limiting. The QCM data show the considered surface chemistry can be used for depositing thin MoOx and TixMoyOz films. Fields of potential application of these thin films a catalysis, electrochromic devices, lithium-ion batteries, antibacterial coatings and others.

Automated summary

This study investigates the growth characteristics of molybdenum oxide and titanium-molybdenum oxide thin films using thermal atomic layer deposition. The linear growth of the films with an increase in the number of ALD cycles is observed. The surface reactions of halides and H2O are found to be self-limiting. The results suggest that the studied surface chemistry can be used for depositing MoOx and TixMoyOz films.