期刊
NATURE MATERIALS
卷 21, 期 11, 页码 1225-1239出版社
NATURE PORTFOLIO
DOI: 10.1038/s41563-022-01383-2
关键词
-
类别
资金
- National Key Research and Development Program of China [2021YFA1200500]
- National Natural Science Foundation of China [61925402, 62090032]
- Science and Technology Commission of Shanghai Municipality [19JC1416600]
Despite technical upgrades, silicon limitations are hindering the progress of complementary metal-oxide-semiconductor circuits. Two-dimensional materials are being explored as potential candidates to compensate for silicon deficiencies. This article attempts to bridge two-dimensional materials with silicon technology, discussing material synthesis, device design, and circuit integration requirements.
Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据