期刊
JOURNAL OF INTELLIGENT MATERIAL SYSTEMS AND STRUCTURES
卷 28, 期 13, 页码 1775-1788出版社
SAGE PUBLICATIONS LTD
DOI: 10.1177/1045389X16679294
关键词
piezoelectric semiconductor; Green's function; extended displacement discontinuity boundary element method; penny-shaped crack; extended stress intensity factor
资金
- National Natural Science Foundation of China [11572289]
- Construction Project of Key Laboratory in Henan Colleges
- Henan Bairen Program
- Zhengzhou University
In this article, a penny-shaped crack in the isotropic plane of three-dimensional transversely isotropic piezoelectric semiconductors is analyzed via the displacement discontinuity boundary element method. The general solutions are derived based on the generalized Almansi's theorem and the operator theory. Green's functions are derived using the Hankel transformation under uniformly distributed extended displacement discontinuities (including displacement discontinuities, potential discontinuity, and electron density discontinuity) on a penny-shaped crack in the isotropic plane of three-dimensional transversely isotropic piezoelectric semiconductors. Using the extended displacement discontinuity boundary element method, penny-shaped cracks in transversely isotropic plane of three-dimensional piezoelectric semiconductors are studied, and the stress, electric displacement, and electric current intensity factors under uniform mechanical-electric-current loads applied on the penny-shaped crack surface are calculated. The fracture behaviors of piezoelectric semiconductors are studied.
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