4.5 Article

Spin transport properties in ferromagnet/superconductor junctions on topological insulator

期刊

CHINESE PHYSICS B
卷 31, 期 12, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/1674-1056/ac989e

关键词

TI-based FM; SC junctions; magnetic gap effect; Andreev retro-reflection; specular Andreev reflection

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The spin-dependent Andreev reflection in a thin-film topological insulator ferromagnet/superconductor junction is investigated theoretically. It is found that the magnetic gap in the ferromagnet enhances the Andreev retro-reflection while suppressing the specular Andreev reflection. Applying a gate potential to the electrode on top of the superconductor enhances both types of reflections.
The spin-dependent Andreev reflection is investigated theoretically by analyzing the electronic transport in a thin-film topological insulator (TI) ferromagnet/superconductor (FM/SC) junction. The tunneling conductance and shot noise are calculated based on the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk theory. It is found that the magnetic gap in ferromagnet can enhance the Andreev retro-reflection but suppress the specular Andreev reflection. The gate potential applied to the electrode on top of superconductor can enhance the two types of reflections. There is a transition between the two types of reflections at which both the tunneling conductance and differential shot noise become zero. These results provide a method to realize and detect experimentally the intra-band specular Andreev reflection in thin film TI-based FM/SC structures.

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