Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

(2021) Shuiyuan Wang et al.   Nature Communications

Single‐Atom Quantum‐Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride

(2021) Revannath Dnyandeo Nikam et al.   Small

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

(2021) Yesheng Li et al.   Nature Electronics

Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change

(2021) Yu-Ting Huang et al.   Applied Physics Reviews

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

(2021) Ying Zhang et al.   Nature Communications

A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

(2021) Yifei Yang et al.   Nature Communications

Neuromorphic nanoelectronic materials

(2020) Vinod K. Sangwan et al.   Nature Nanotechnology

Two-dimensional materials for next-generation computing technologies

(2020) Chunsen Liu et al.   Nature Nanotechnology

Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems

(2020) Myungsoo Kim et al.   Nature Electronics

A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

(2020) Ruijing Ge et al.   ADVANCED MATERIALS

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

(2019) Renjing Xu et al.   NANO LETTERS

Thinnest Nonvolatile Memory Based on Monolayer h-BN

(2019) Xiaohan Wu et al.   ADVANCED MATERIALS

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

(2019) Lin Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Flat Boron: A New Cousin of Graphene

(2019) Sheng-Yi Xie et al.   ADVANCED MATERIALS

Graphene–Boron Nitride–Graphene Cross-Point Memristors with Three Stable Resistive States

(2019) Kaichen Zhu et al.   ACS Applied Materials & Interfaces

Two-dimensional transition metal dichalcogenides: interface and defect engineering

(2018) Zehua Hu et al.   CHEMICAL SOCIETY REVIEWS

Monatomic phase change memory

(2018) Martin Salinga et al.   NATURE MATERIALS

Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe

(2018) Nian-Ke Chen et al.   PHYSICAL REVIEW LETTERS

Zero-static power radio-frequency switches based on MoS2 atomristors

(2018) Myungsoo Kim et al.   Nature Communications

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing

(2018) Xiaojian Zhu et al.   NATURE MATERIALS

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

Engineering two-dimensional electronics by semiconductor defects

(2017) Dan Wang et al.   Nano Today

Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications

(2016) He Tian et al.   ADVANCED MATERIALS

Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane

(2016) Justin C. Koepke et al.   CHEMISTRY OF MATERIALS

Stochastic phase-change neurons

(2016) Tomas Tuma et al.   Nature Nanotechnology

Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions

(2015) U. Chandni et al.   NANO LETTERS

Catalytic Activity of Au and Au2 on the h-BN Surface: Adsorption and Activation of O2

(2012) Min Gao et al.   Journal of Physical Chemistry C

Defect and impurity properties of hexagonal boron nitride: A first-principles calculation

(2012) Bing Huang et al.   PHYSICAL REVIEW B

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

(2011) Ki Kang Kim et al.   NANO LETTERS

Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys

(2011) Xian-Bin Li et al.   PHYSICAL REVIEW LETTERS

Magnetic memory of a single-molecule quantum magnet wired to a gold surface

(2009) Matteo Mannini et al.   NATURE MATERIALS