Proposing the n+-AlGaN tunnel junction for an efficient deep-ultraviolet light-emitting diode at 254  nm emission

标题
Proposing the n+-AlGaN tunnel junction for an efficient deep-ultraviolet light-emitting diode at 254  nm emission
作者
关键词
-
出版物
APPLIED OPTICS
Volume 61, Issue 31, Pages 9186
出版商
Optica Publishing Group
发表日期
2022-09-30
DOI
10.1364/ao.473561

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