Superior Quality Low-Temperature Growth of Three-Dimensional Semiconductors Using Intermediate Two-Dimensional Layers

Critical thickness of GaN film in controllable stress-induced self-separation for preparing native GaN substrates

(2019) Mengda Li et al.   MATERIALS & DESIGN

One dimensional metallic edges in atomically thin WSe2 induced by air exposure

(2018) Rafik Addou et al.   2D Materials

Polarity governs atomic interaction through two-dimensional materials

(2018) Wei Kong et al.   NATURE MATERIALS

Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy

(2017) Masaki Nakano et al.   NANO LETTERS

Remote epitaxy through graphene enables two-dimensional material-based layer transfer

(2017) Yunjo Kim et al.   NATURE

Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers

(2016) Jun Hong Park et al.   ACS Nano

Clustered quantum dots in single GaN islands formed at threading dislocations

(2016) Gordon Schmidt et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

(2014) Jeehwan Kim et al.   Nature Communications

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

(2013) Stephen McDonnell et al.   ACS Nano

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

(2012) Yasuyuki Kobayashi et al.   NATURE

Fluorine-doped ZnSe for applications in quantum information processing

(2010) T. D. Ladd et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

(2010) Kunook Chung et al.   SCIENCE

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

Green laser emission from monolithic II-VI-based pillar microcavities near room temperature

(2008) Carsten Kruse et al.   APPLIED PHYSICS LETTERS