期刊
SCIENCE ADVANCES
卷 8, 期 23, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.abn3837
关键词
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资金
- Research Grant Council of Hong Kong [15301621, AoE/P-701/20]
- Hong Kong Polytechnic University [1-ZE1T]
- Science, Technology, and Innovation Commission of Shenzhen [JCYJ20180507183424383]
This article introduces a low-loss transistor based on topological phase change. By modulating the energy difference of tellurium, the transistor switches between Weyl and conventional phases, enabling low-loss and high-efficiency transport. This study provides a new strategy for achieving ultra-low power electronics.
Modern electronics demand transistors with extremely high performance and energy efficiency. Charge-based transistors with conventional semiconductors experience substantial heat dissipation because of carrier scattering. Here, we demonstrate low-loss topological phase change transistors (TPCTs) based on tellurium, a Weyl semiconductor. By modulating the energy separation between the Fermi level and the Weyl point of tellurium through electrostatic gate modulation, the device exhibits topological phase change between Weyl (Chern number # 0) and conventional (Chern number = 0) semiconductors. In the Weyl ON state, the device has low-loss transport characteristics due to the global topology of gauge fields against external perturbations; the OFF state exhibits trivial charge transport in the conventional phase by moving the Fermi level into the bandgap. The TPCTs show a high ON/OFF ratio (10(8)) at low operation voltage (<= 2 volts) and high ON-state conductance (39 mS/mu m). Our studies provide alternative strategies for realizing ultralow power electronics.
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