Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface

We present a theoretically investigation about the electron transport through a single-barrier structures in HgTe/CdTe quantum wells (QWs) with inverted band structure. For HgTe/CdTe QWs structure, the transmission probabilities show great dependence on the Rashba spin-orbit interaction (RSOI), the incident angle, the incident Fermi energy and the electric modulation potential . By tuning the modulation amplitude with gate voltage or the strength of RSOI modulation, the efficient spin-polarized P-Z = 1 is achieved, which is formed due to the spin-split in band spectrum induced by the RSOI modulation. This electric mechanism provides us a way to manipulate the spin polarization electrically and convenient for experimental verification.

Automated summary

In this study, we theoretically investigate the electron transport through a single-barrier structure in HgTe/CdTe quantum wells with inverted band structure. The transmission probabilities show significant dependence on various factors, including the Rashba spin-orbit interaction, incident angle, incident Fermi energy, and electric modulation potential. By tuning the modulation amplitude with gate voltage or the strength of RSOI modulation, efficient spin-polarized transport with P-Z=1 is achieved. This electric mechanism provides a convenient way to manipulate spin polarization, which can be experimentally verified.