Thermal stress relaxation phenomenon through forming the interstitial region in CZ silicon pulled with rapid and slow cooling heat shields

Mechanism to form ring-like distributed oxidation-induced stacking fault bands through relaxing thermal stress during stopping the growth in CZ silicon crystals

(2022) Takao Abe   JOURNAL OF CRYSTAL GROWTH

Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth

(2019) Takao Abe et al.   PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal

(2017) T. Abe et al.   JOURNAL OF CRYSTAL GROWTH

Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique

(2016) T. Abe et al.   JOURNAL OF CRYSTAL GROWTH

Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt

(2016) T. Abe et al.   JOURNAL OF CRYSTAL GROWTH

The effect of mass transfer on the temperature gradient of a crystal growing from melt

(2012) Koun Shirai et al.   JOURNAL OF CRYSTAL GROWTH

Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results

(2011) Takao Abe et al.   JOURNAL OF CRYSTAL GROWTH

Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations

(2011) Manabu Nishimoto et al.   JOURNAL OF THE JAPAN INSTITUTE OF METALS