Superheating suppresses structural disorder in layered BiI 3 semiconductors grown by the Bridgman method

标题
Superheating suppresses structural disorder in layered BiI 3 semiconductors grown by the Bridgman method
作者
关键词
A1: Defects, A2: Bridgman growth, B1: Halides, B1: Bismuth iodide, B2: Semiconducting materials
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 433, Issue -, Pages 153-159
出版商
Elsevier BV
发表日期
2015-11-03
DOI
10.1016/j.jcrysgro.2015.10.019

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