Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

出版年份 2016 全文链接

标题

作者

关键词

A1. Hole concentration, A1. Mg doping, A3. Plasma-assisted molecular beam epitaxy, GaN

出版物

Volume 439, Issue -, Pages 87-92

出版商

Elsevier BV

发表日期

2016-01-16

DOI

10.1016/j.jcrysgro.2016.01.011

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