HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

标题

作者

关键词

A3. Smart Cut™, A3. Hydride vapor phase epitaxy, B1. GaN, B1. Nitrides, B2. Semiconducting III–V materials, B3. Laser diodes

出版物

Volume 456, Issue -, Pages 73-79

出版商

Elsevier BV

发表日期

2016-09-06

DOI

10.1016/j.jcrysgro.2016.08.060

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