Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate

出版年份 2016 全文链接

标题

作者

关键词

A1. X-ray diffraction, A3. Polycrystalline deposition, A3. Physical vapor deposition processes, B1. Nitride, B1. Silicon carbide

出版物

JOURNAL OF CRYSTAL GROWTH

Volume 440, Issue -, Pages 76-80

出版商

Elsevier BV

发表日期

2016-02-09

DOI

10.1016/j.jcrysgro.2016.01.037

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