Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate

标题
Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate
作者
关键词
A1. X-ray diffraction, A3. Polycrystalline deposition, A3. Physical vapor deposition processes, B1. Nitride, B1. Silicon carbide
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 440, Issue -, Pages 76-80
出版商
Elsevier BV
发表日期
2016-02-09
DOI
10.1016/j.jcrysgro.2016.01.037

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