Hetero-epitaxy of ε-Ga 2 O 3 layers by MOCVD and ALD

标题

作者

关键词

A1. Phase stability, A3. Atomic layer epitaxy, A3. Metalorganic Chemical Vapor Deposition, B1. Oxides;, B2. Semiconducting gallium compounds

出版物

Volume 443, Issue -, Pages 25-30

出版商

Elsevier BV

发表日期

2016-03-13

DOI

10.1016/j.jcrysgro.2016.03.013

联系作者

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