Two-dimensional Ta2NiSe5/GaSe van der Waals heterojunction for ultrasensitive visible and near-infrared dual-band photodetector

Dual-band photodetectors have attracted intensive attention because of the requirement of multiband information [such as visible (VIS) and near-infrared (NIR)] in multicolor imaging technology, in which additional information beyond human vision could assist object identification and navigations. The use of 2D materials can break the limitation of high cost of conventional epitaxial semiconductors and a complex cryogenic cooling system for multi-band detection, but there is still much room to improve the performance, especially in responsivity and signal noise ratio. Herein, we have fabricated a VIS-NIR dual-band photodetector based on a multilayer Ta2NiSe5/GaSe heterojunction. Benefiting from the type-II heterojunction, the separation of photo-induced carriers is naturally enhanced, which promotes the responsivity of this dual-band photodetector to 4.8 A W-1 (VIS) and 0.15 A W-1 (NIR) at room temperature with a suppressed dark current at similar to 4 pA. Our work suggests that the Ta2NiSe5/GaSe heterostructure is a promising candidate for ultrasensitive VIS-NIR dual-band photodetection. Published under an exclusive license by AIP Publishing.

Automated summary

Dual-band photodetectors have attracted intensive attention due to the need for multiband information in multicolor imaging technology. A VIS-NIR dual-band photodetector based on a multilayer Ta2NiSe5/GaSe heterojunction has been fabricated, showing enhanced responsivity and suppressed dark current, suggesting its potential for ultrasensitive dual-band photodetection in visible and near-infrared ranges.