期刊
ADVANCED MATERIALS
卷 34, 期 39, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202203283
关键词
2D materials; black phosphorus; molybdenum disulfide; photodetectors; van der Waals heterojunctions
类别
资金
- National Natural Science Foundation of China [61725505, 61975224, 62004207, 12074002]
- University Synergy Innovation Program of Anhui Province [GXXT-2020-050]
- Fund of Anhui Provincial Natural Science Foundation [2008085MF206]
- National Key R&D Program of China [2017YFA0302904, 2018YFA0305602]
- Shanghai Sailing Project [20YF1455900]
- Chinese Academy of Sciences Foundation [2019-169]
- Major Basic Program of Natural Science Foundation of Shandong Province [ZR2021ZD01]
- Recruitment Program for Leading Talent Team of Anhui Province, 2020
- Open Fund of State Key Laboratory of Infrared Physics [SITP-NLIST-YB-2022-06]
- State Key Laboratory of Luminescence and Applications [SKLA-2021-03]
- Open Fund of Information Materials and Intelligent Sensing Laboratory of Anhui Province [IMIS202101]
- Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province [IRKL2022KF03]
In this study, a fully depleted self-aligned MoS2-BP-MoS2 vdW heterostructure photodetector with high sensitivity and broad wavelength range was reported, which is a new type of room-temperature operating MWIR photodetector.
Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2-BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 x 10(-14) W Hz(-1/2), in the MWIR region. A peak specific detectivity of 8.61 x 10(10) cm Hz(1/2) W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of approximate to 4 mu s both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.
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