Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors

标题
Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors
作者
关键词
Molecular beam epitaxy, InN/GaN heterostructure, Photodetector, TCAD simulation
出版物
Surfaces and Interfaces
Volume 29, Issue -, Pages 101772
出版商
Elsevier BV
发表日期
2022-02-04
DOI
10.1016/j.surfin.2022.101772

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