期刊
NATURE ELECTRONICS
卷 5, 期 4, 页码 233-240出版社
NATURE PORTFOLIO
DOI: 10.1038/s41928-022-00753-7
关键词
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资金
- Nanyang Assistant Professorship grant from Nanyang Technological University
- Academic Research Fund Tier 2 from the Singapore Ministry of Education [MOE-T2EP50120-0006, MOE-T2EP50220-0016]
- Academic Research Fund Tier 3 from the Singapore Ministry of Education [MOE2018-T3-1-002]
- Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP grant) [NRF-CRP21-2018-0003]
- Agency for Science, Technology and Research (A*STAR) under its AME IRG grant [A20E5c0094]
- State Key Laboratory of Low-Dimensional Quantum Physics
- Tsinghua University
- National Natural Science Foundation of China [51672007, 11974023]
- National Key R&D Program of China [2016YFA0300804]
- Key Area R&D Program of Guangdong Province [2018B010109009]
- Key R&D Program of Guangdong Province [2018B030327001]
- National Equipment Program of China [ZDYZ2015-1]
High-performance field-effect transistors made of n-type molybdenum disulfide and p-type tungsten diselenide can be fabricated using single-crystal strontium titanate dielectrics and van der Waals forces. This integration provides a promising approach for building next-generation electronic devices with ultrascaled channel lengths.
High-performance n-type molybdenum disulfide and p-type tungsten diselenide field-effect transistors can be fabricated using single-crystal strontium titanate dielectrics that are transferred onto two-dimensional semiconductors with the help of van der Waals forces. Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics-which are challenging to deposit. Here we show that single-crystal strontium titanate-a high-kappa perovskite oxide-can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 10(8) at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec(-1). We also show that the devices can be used to create low-power complementary metal-oxide-semiconductor inverter circuits.
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