Qubits made by advanced semiconductor manufacturing

Silicon spin qubits can be fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a Si-28/(SiO2)-Si-28 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control-a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.

Automated summary

Silicon spin qubits can be fabricated using optical lithography and industrial processing in a 300 mm semiconductor manufacturing facility. This approach allows for the production of nanoscale gate patterns with high yield. The quantum dots exhibit good tunnel barrier control, making them suitable for fault-tolerant two-qubit gates.