4.8 Article

Orderly disorder in magic-angle twisted trilayer graphene

期刊

SCIENCE
卷 376, 期 6589, 页码 193-+

出版社

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abk1895

关键词

-

资金

  1. Programmable Quantum Materials, an Energy Frontier Research Center - US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0019443]
  2. NSF MRSEC program through Columbia in the Center for Precision-Assembled Quantum Materials (PAQM) [DMR-2011738, DMR-2004691]
  3. Air Force Office of Scientific Research [FA9550-21-1-0378]
  4. STC Center for Integrated Quantum Materials
  5. NSF [DMR-1231319, DMR-2002850]
  6. ARO MURI grant [W911NF14-0247]
  7. NSF DMREF [1922165]
  8. FAS Division of Science, Research Computing Group at Harvard University
  9. Elemental Strategy Initiative by the MEXT, Japan [JPMXP0112101001]
  10. JSPS KAKENHI [19H05790, JP20H00354]
  11. Direct For Mathematical & Physical Scien
  12. Division Of Materials Research [1922165] Funding Source: National Science Foundation

向作者/读者索取更多资源

The magic-angle twisted trilayer graphene has shown a potential for engineering strongly correlated flat bands. Using low-temperature scanning tunneling microscopy, researchers have observed a strong reconstruction of the moire lattice in real trilayer samples, leading to the formation of localized twist-angle faults. These localized regions exhibit different electronic structures compared to the background regions, resulting in a doping-dependent, spatially granular electronic landscape.
Magic-angle twisted trilayer graphene (TTG) has recently emerged as a platform to engineer strongly correlated flat bands. We reveal the normal-state structural and electronic properties of TTG using low-temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples undergo a strong reconstruction of the moire lattice, which locks layers into near-magic-angle, mirror symmetric domains comparable in size with the superconducting coherence length. This relaxation introduces an array of localized twist-angle faults, termed twistons and moire solitons, whose electronic structure deviates strongly from the background regions, leading to a doping-dependent, spatially granular electronic landscape. The Fermi-level density of states is maximally uniform at dopings for which superconductivity has been observed in transport measurements.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Materials Science, Multidisciplinary

High Sensitivity Spin Defects in hBN Created by High-Energy He Beam Irradiation

Haidong Liang, Yuan Chen, Chengyuan Yang, Kenji Watanabe, Takashi Taniguchi, Goki Eda, Andrew A. Bettiol

Summary: This study demonstrates the generation of spin defects with high PL intensity and ODMR contrast using high-energy helium ion beams, while maintaining a small linewidth, thereby achieving good sensitivity. By comparing different fluences of helium irradiations, an optimal fluence is determined that can create spin defects without damaging the overall crystal lattice structure. Furthermore, with a focused beam, such spin defects can be created deterministically with nanometer precision.

ADVANCED OPTICAL MATERIALS (2023)

Article Chemistry, Multidisciplinary

High-Q Nanophotonics over the Full Visible Spectrum Enabled by Hexagonal Boron Nitride Metasurfaces

Lucca Kuehner, Luca Sortino, Benjamin Tilmann, Thomas Weber, Kenji Watanabe, Takashi Taniguchi, Stefan A. Maier, Andreas Tittl

Summary: All-dielectric optical metasurfaces with high-Q resonances throughout the visible spectrum have been achieved by leveraging symmetry-broken quasi bound states in the continuum (qBICs). These qBIC resonances effectively suppress radiation losses, allowing for the use of low-index van der Waals materials such as hexagonal boron nitride (hBN). The experimental results also demonstrated enhanced second-harmonic generation using the high-Q resonances.

ADVANCED MATERIALS (2023)

Article Chemistry, Multidisciplinary

Aharonov-Bohm Oscillations in Bilayer Graphene Quantum Hall Edge State Fabry-Perot Interferometers

Hailong Fu, Ke Huang, Kenji Watanabe, Takashi Taniguchi, Morteza Kayyalha, Jun Zhu

Summary: In this experiment, Fabry-Perot interferometers were constructed using a split-gate design and measurements of Aharonov-Bohm oscillations were presented. The velocity of the edge state was found to be approximately 6 x 10(4) m/s at filling factor nu = 2 and decreased with increasing filling factor. The dc bias and temperature dependence of the interference suggested electron-electron interaction induced decoherence mechanisms. These results pave the way for exploring fractional and non-Abelian braiding statistics in this promising device platform.

NANO LETTERS (2023)

Article Nanoscience & Nanotechnology

Thickness-Dependent Cross-Plane Thermal Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Gabriel R. Jaffe, Keenan J. Smith, Kenji Watanabe, Takashi Taniguchi, Max G. Lagally, Mark A. Eriksson, Victor W. Brar

Summary: We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals and find that submicrometer thick flakes exhibit high thermal conductivities exceeding previously reported bulk values by more than 60%. We also find that introducing planar twist interfaces limits the maximum phonon mean free paths and decreases the cross-plane thermal conductivity of the stack.

ACS APPLIED MATERIALS & INTERFACES (2023)

Article Chemistry, Multidisciplinary

Gate-Tunable Bound Exciton Manifolds in Monolayer MoSe2

Yuan Chen, Haidong Liang, Leyi Loh, Yiwei Ho, Ivan Verzhbitskiy, Kenji Watanabe, Takashi Taniguchi, Michel Bosman, Andrew A. Bettiol, Goki Eda

Summary: We observe bound exciton (BX) complex manifolds in monolayer MoSe2 with intentionally created monoselenium vacancies (VSe) using proton beam irradiation. The emission intensity of different BX peaks exhibits contrasting dependence on electrostatic doping near the onset of free electron injection. These complexes, which are more strongly bound than trions and biexcitons, survive up to around 180 K and show moderate valley polarization memory, indicating partial free exciton character.

NANO LETTERS (2023)

Article Multidisciplinary Sciences

Evidence for Dirac flat band superconductivity enabled by quantum geometry

Haidong Tian, Xueshi Gao, Yuxin Zhang, Shi Che, Tianyi Xu, Patrick Cheung, Kenji Watanabe, Takashi Taniguchi, Mohit Randeria, Fan Zhang, Chun Ning Lau, Marc W. Bockrath

Summary: In a flat band superconductor, the charge carriers' velocity is extremely slow, leading to peculiar superconducting behavior. Using twisted bilayer graphene, the researchers investigate the effect of the slow velocity on the superconducting state. They find evidence for small Cooper pairs and discuss the unusual nature of ultra-strong coupling superconductivity in ultra-flat Dirac bands.

NATURE (2023)

Article Nanoscience & Nanotechnology

Every-other-layer dipolar excitons in a spin-valley locked superlattice

Yinong Zhang, Chengxin Xiao, Dmitry Ovchinnikov, Jiayi Zhu, Xi Wang, Takashi Taniguchi, Kenji Watanabe, Jiaqiang Yan, Wang Yao, Xiaodong Xu

Summary: Monolayer semiconducting transition metal dichalcogenides possess broken inversion symmetry and strong spin-orbit coupling, resulting in a unique spin-valley locking effect. In stacked multilayers, this effect leads to the formation of a spin-valley locked superlattice structure. Dipolar excitons, which have the electron and hole constituents separated in an every-other-layer configuration, become optically bright through hybridization with intralayer excitons. The reflectance spectra further reveal the presence of excited state orbitals and fine spectroscopy structures, indicating a sizable binding energy.

NATURE NANOTECHNOLOGY (2023)

Article Chemistry, Multidisciplinary

Dielectric Environment Sensitivity of Carbon Centers in Hexagonal Boron Nitride

Danis I. Badrtdinov, Carlos Rodriguez-Fernandez, Magdalena Grzeszczyk, Zhizhan Qiu, Kristina Vaklinova, Pengru Huang, Alexander Hampel, Kenji Watanabe, Takashi Taniguchi, Lu Jiong, Marek Potemski, Cyrus E. Dreyer, Maciej Koperski, Malte Rosner

Summary: A key advantage of utilizing van-der-Waals (vdW) materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate, which allows for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this also poses a challenge for defect identification and characterization due to the influence of the atomic environment on the defect's properties. This study explores how the environment influences the properties of carbon impurity centers in hexagonal boron nitride (hBN) and demonstrates the dominant effect of the change in the environment on the screening of density-density Coulomb interactions between the defect orbitals.
Article Chemistry, Multidisciplinary

Probing the Inelastic Electron Tunneling via the Photocurrent in a Vertical Graphene van der Waals Heterostructure

Binghe Xie, Zijie Ji, Jiaxin Wu, Ruan Zhang, Yunmin Jin, Kenji Watanabe, Takashi Taniguchi, Zhao Liu, Xinghan Cai

Summary: Inelastic electron tunneling (IET) accompanied by energy transfer is widely used to study collective modes in solid-state materials. By directly observing IET in a graphene-based vertical tunnel junction device, characteristic features are linked to phonon-assisted IET, demonstrating a promising method for probing low-energy excitations in graphene-based van der Waals heterostructures.

ACS NANO (2023)

Article Chemistry, Multidisciplinary

Magnetic Field-Stabilized Wigner Crystal States in a Graphene Moire Superlattice

Guorui Chen, Ya-Hui Zhang, Aaron Sharpe, Zuocheng Zhang, Shaoxin Wang, Lili Jiang, Bosai Lyu, Hongyuan Li, Kenji Watanabe, Takashi Taniguchi, Zhiwen Shi, David Goldhaber-Gordon, Yuanbo Zhang, Feng Wang

Summary: We report the observation of magnetic field-stabilized Wigner crystal states in ABC-stacked trilayer graphene on boron nitride (ABC-TLG/hBN). Correlated insulating states emerge at multiple fractional and integer fillings under a magnetic field. These insulating states can be attributed to generalized Mott states for integer fillings and generalized Wigner crystal states for fractional fillings. The nu = 2 insulating state persists up to 30 T and can be described by a Mott-Hofstadter transition at a high magnetic field.

NANO LETTERS (2023)

Article Chemistry, Multidisciplinary

Dirac Half-Semimetallicity and Antiferromagnetism in Graphene Nanoribbon/Hexagonal Boron Nitride Heterojunctions

Nikita V. Tepliakov, Ruize Ma, Johannes Lischner, Efthimios Kaxiras, Arash A. Mostofi, Michele Pizzochero

Summary: In this study, it is predicted that the recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride exhibit half-semimetallic behavior, with opposite energy shifts of the states residing at the two edges while maintaining their intrinsic antiferromagnetic exchange coupling. These heterojunctions undergo an antiferromagnetic-to-ferrimagnetic phase transition upon doping, where the sign of the excess charge controls the spatial localization of the net magnetic moments. This research holds promise for the development of carbon-based spintronics.

NANO LETTERS (2023)

Article Chemistry, Physical

Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers

Kahyun Ko, Ayoung Yuk, Rebecca Engelke, Stephen Carr, Junhyung Kim, Daesung Park, Hoseok Heo, Hyun-Mi Kim, Seul-Gi Kim, Hyeongkeun Kim, Takashi Taniguchi, Kenji Watanabe, Hongkun Park, Efthimios Kaxiras, Sang Mo Yang, Philip Kim, Hyobin Yoo

Summary: Conventional antiferroelectric materials can transition to a ferroelectric phase under strong electric fields, while twisted stacks of van der Waals crystals form moire superlattices with polar domains and anti-aligned dipoles. In this moire domain antiferroelectric (MDAF) arrangement, the distribution of electric dipoles is different from that of two-dimensional ferroelectrics. Through operando transmission electron microscopy, it has been observed that the topological protection provided by the domain wall network prevents the MDAF-to-FE transition in twisted bilayer WSe2. However, decreasing the twist angle leads to the disappearance of the domain wall network and the occurrence of this transition. Additionally, the analysis of pinning disorders provides insights on improving the switching speed of van der Waals ferroelectrics.

NATURE MATERIALS (2023)

Article Multidisciplinary Sciences

Exciton Superposition across Moire States in a Semiconducting Moire Superlattice

Zhen Lian, Dongxue Chen, Yuze Meng, Xiaotong Chen, Ying Su, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Chuanwei Zhang, Yong-Tao Cui, Su-Fei Shi

Summary: By applying an electric field, the authors are able to manipulate the superposition between two moire sites in the trilayer WSe2 and monolayer WS2 system through hybridization with intralayer excitons. Moire superlattices of semiconducting transition metal dichalcogenides allow for unprecedented control of electron wavefunctions, leading to the emergence of quantum states.

NATURE COMMUNICATIONS (2023)

Article Materials Science, Multidisciplinary

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Clarisse Fournier, Kenji Watanabe, Takashi Taniguchi, Julien Barjon, Stephanie Buil, Jean-Pierre Hermier, Aymeric Delteil

Summary: The ability to identify and characterize homogeneous and inhomogeneous dephasing processes is crucial in solid-state quantum optics. A combination of resonant laser excitation and second-order photon correlations allows access to fast dynamics. The color center in hexagonal boron nitride experiences spectral diffusion at a characteristic time scale of tens of microseconds while emitting Fourier-limited single photons between spectral jumps.

PHYSICAL REVIEW B (2023)

Article Chemistry, Multidisciplinary

Charge Transfer and Asymmetric Coupling of MoSe2 Valleys to the Magnetic Order of CrSBr

Caique Serati de Brito, Paulo E. Faria Junior, Talieh S. Ghiasi, Josep Ingla-Aynes, Cesar Ricardo Rabahi, Camila Cavalini, Florian Dirnberger, Samuel Manas-Valero, Kenji Watanabe, Takashi Taniguchi, Klaus Zollner, Jaroslav Fabian, Christian Schueller, Herre S. J. van der Zant, Yara Galvao Gobato

Summary: This study presents magneto photoluminescence investigations of monolayer MoSe2 on layered A-type antiferromagnetic semiconductor CrSBr. The results reveal a clear influence of CrSBr magnetic order on the optical properties of MoSe2, including anomalous linear-polarization dependence, changes of exciton/trion energies, magnetic-field dependence of PL intensities, and asymmetric magnetic proximity interaction in the valley g-factor. First-principles calculations suggest a broken-gap (type-III) band alignment in MoSe2/CrSBr, facilitating charge transfer processes. This work establishes the potential of antiferromagnetic-nonmagnetic interfaces in controlling the valley and excitonic properties of TMDs, with implications for opto-spintronics device development.

NANO LETTERS (2023)

暂无数据