Magnetism and magnetocrystalline anisotropy in single-layer PtSe2: Interplay between strain and vacancy

Tuning the electronic properties of monolayer and bilayer PtSe2via strain engineering

(2016) Pengfei Li et al.   Journal of Materials Chemistry C

Raman characterization of platinum diselenide thin films

(2016) Maria O’Brien et al.   2D Materials

Magnetism of Ta dichalcogenide monolayers tuned by strain and hydrogenation

(2015) Priyanka Manchanda et al.   APPLIED PHYSICS LETTERS

Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

(2015) Yeliang Wang et al.   NANO LETTERS

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

(2014) Thomas Heine   ACCOUNTS OF CHEMICAL RESEARCH

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Tuning magnetism of monolayer MoS2 by doping vacancy and applying strain

(2014) Huiling Zheng et al.   APPLIED PHYSICS LETTERS

Strain-induced magnetism in MoS2 monolayer with defects

(2014) Peng Tao et al.   JOURNAL OF APPLIED PHYSICS

Tuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain

(2014) Hongyan Guo et al.   Journal of Physical Chemistry C

Bilayer Phosphorene: Effect of Stacking Order on Bandgap and Its Potential Applications in Thin-Film Solar Cells

(2014) Jun Dai et al.   Journal of Physical Chemistry Letters

Giant Magnetic Anisotropy of Transition-Metal Dimers on Defected Graphene

(2014) Jun Hu et al.   NANO LETTERS

Two-dimensional semiconductors with possible high room temperature mobility

(2014) Wenxu Zhang et al.   Nano Research

Tensile strain induced switching of magnetic states in NbSe2and NbS2single layers

(2014) Ying Xu et al.   Nanoscale

Phosphorene excites materials scientists

(2014) Eugenie Samuel Reich   NATURE

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Effect of lattice strain on the oxygen vacancy formation and hydrogen adsorption at CeO2(111) surface

(2014) Dongwei Ma et al.   PHYSICS LETTERS A

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

(2014) Michele Buscema et al.   Nature Communications

Prediction of magnetic anisotropy of 5d transition metal-doped g-C3N4

(2014) Yun Zhang et al.   Journal of Materials Chemistry C

Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers

(2013) Ana Laura Elías et al.   ACS Nano

Strain effects on formation and migration energies of oxygen vacancy in perovskite ferroelectrics: A first-principles study

(2013) Q. Yang et al.   JOURNAL OF APPLIED PHYSICS

Computational Search for Single-Layer Transition-Metal Dichalcogenide Photocatalysts

(2013) Houlong L. Zhuang et al.   Journal of Physical Chemistry C

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

(2013) Wu Zhou et al.   NANO LETTERS

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Strain-controlled oxygen vacancy formation and ordering in CaMnO3

(2013) Ulrich Aschauer et al.   PHYSICAL REVIEW B

Realization of Spin Gapless Semiconductors: The Heusler CompoundMn2CoAl

(2013) Siham Ouardi et al.   PHYSICAL REVIEW LETTERS

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2

(2012) Yungang Zhou et al.   ACS Nano

Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

(2012) C. Ataca et al.   Journal of Physical Chemistry C

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Ideal strength and phonon instability in single-layer MoS2

(2012) Tianshu Li   PHYSICAL REVIEW B

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW LETTERS

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

High-frequency, scaled graphene transistors on diamond-like carbon

(2011) Yanqing Wu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

(2010) Junyi Zhu et al.   PHYSICAL REVIEW LETTERS

Spin mapping at the nanoscale and atomic scale

(2009) Roland Wiesendanger   REVIEWS OF MODERN PHYSICS

VESTA: a three-dimensional visualization system for electronic and structural analysis

(2008) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Proposal for a New Class of Materials: Spin Gapless Semiconductors

(2008) X. L. Wang   PHYSICAL REVIEW LETTERS