Article
Chemistry, Multidisciplinary
Nathali A. Franchina Vergel, L. Christiaan Post, Davide Sciacca, Maxime Berthe, Francois Vaurette, Yannick Lambert, Dmitri Yarekha, David Troadec, Christophe Coinon, Guillaume Fleury, Gilles Patriarche, Tao Xu, Ludovic Desplanque, Xavier Wallart, Daniel Vanmaekelbergh, Christophe Delerue, Bruno Grandidier
Summary: Electron states in semiconductor materials can be modified by quantum confinement, and the concept of lateral geometry in semiconductor heterostructures can further tailor the electronic band structure. By utilizing block copolymer lithography, a honeycomb In0.53Ga0.47As/InP heterostructure with multiorbital bands has been designed, fabricated, and characterized, revealing the existence of a p-orbital flat band. The protection of the flat band against lateral and vertical disorder makes this system particularly attractive for studying exotic phases of matter.
Article
Physics, Applied
Philip C. Klipstein
Summary: In a photodiode made from a narrow bandgap III-V material such as InSb, the dominant dark current mechanism is thermal generation-recombination in the depletion region. XBn or XBp barrier detectors suppress the generation-recombination current by using a wide bandgap barrier material. Diffusion limited barrier detectors have a unity gain device architecture that is fundamentally different from traditional photodiodes. High performance barrier detector arrays for mid- and long-wave infrared detection have been developed using bulk alloy and type II superlattice (T2SL) absorbers.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Multidisciplinary
Junho Choi, Matthias Florian, Alexander Steinhoff, Daniel Erben, Kha Tran, Dong Seob Kim, Liuyang Sun, Jiamin Quan, Robert Claassen, Somak Majumder, Jennifer A. Hollingsworth, Takashi Taniguchi, Kenji Watanabe, Keiji Ueno, Akshay Singh, Galan Moody, Frank Jahnke, Xiaoqin Li
Summary: This study explores how the twist angle between two monolayers in van der Waals heterostructures can control the exciton dynamics, affecting the interlayer exciton lifetimes significantly. Theoretical models separate two mechanisms influencing the radiative lifetimes and predict distinct temperature dependence of interlayer exciton lifetimes at different twist angles.
PHYSICAL REVIEW LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Smruti Medha Mishra, Suman Dey, Tukai Singha, Subhankar Mandal, Asish K. Dehury, Yatendra S. Chaudhary, Biswarup Satpati
Summary: In this study, a silicon nanowire-carbon quantum dot heterostructure photovoltaic device was developed by directly coating carbon quantum dots on chemically-etched silicon nanowire arrays. The efficiency of the solar cells was improved by using carbon quantum dots as a surface passivation and modification element for the silicon nanowires. A 1.6 times absorption enhancement was observed for the nitrogen doped carbon quantum dot decorated pyramidal silicon nanowire heterostructure compared to carbon quantum dots coated silicon nanowires on planar surfaces. The inclusion of nitrogen doped carbon quantum dots into the pyramidal silicon nanowire arrays provided enhanced absorption intensity, making them a good absorber layer in solar cells. The heterostructure also exhibited significant photoluminescence in the blue region, allowing insight into the recombination mechanism.
MATERIALS RESEARCH BULLETIN
(2023)
Article
Chemistry, Physical
A. K. Tan, N. A. Hamzah, M. A. Ahmad, S. S. Ng, Z. Hassan
Summary: In this study, InGaN/GaN heterostructures were grown on a flat sapphire substrate using MOCVD technique. Results showed that a higher V/III ratio led to parasitic behavior by hydrogen dissociated from ammonia, which etched the InN and changed the growth morphology. Moreover, the InGaN thin films grown at higher V/III ratios exhibited more stable bandgap energy and improved electrical properties. The correlation between strain and carrier density was also discussed, and it was concluded that high-quality and thick InGaN thin films could be grown for solar cell applications at higher V/III ratio conditions.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Review
Chemistry, Inorganic & Nuclear
Chun-Wen Tsao, Mei-Jing Fang, Yung-Jung Hsu
Summary: Photocatalysis using semiconductor heterostructures is a promising technology with the potential to meet global energy demand, reduce greenhouse effect, and accomplish environmental remediation. However, challenges such as inadequate solar photons absorption and poor surface reaction kinetics hinder the widespread deployment of semiconductor photocatalysts. Modulating charge dynamics and manipulating carrier behavior could pave the way for the intelligent design of versatile photocatalysts for advanced applications.
COORDINATION CHEMISTRY REVIEWS
(2021)
Article
Physics, Applied
Jianzhuo Liu, Mingchu Tang, Huiwen Deng, Samuel Shutts, Lingfang Wang, Peter M. Smowton, Chaoyuan Jin, Siming Chen, Alywn Seeds, Huiyun Liu
Summary: InAs/GaAs quantum-dot (QD) lasers offer a promising method for Si-based on-chip light sources. However, the integration of III-V materials on Si introduces a high density of threading dislocations (TDs), which limits the lifetime of the laser device. In this study, a kinetic model was proposed to simulate the degradation process caused by TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, was calculated. The rate of degradation of QD lasers with different cavity lengths and quantum-well lasers directly grown on Si substrates was compared by varying the fitting parameters in the calculation of current densities in the kinetic model.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Review
Chemistry, Multidisciplinary
Gryphon A. Drake, Logan P. Keating, Moonsub Shim
Summary: Colloidal nanocrystal heterostructures with variable three-dimensional morphology have size-, shape-, and composition-dependent electronic structure, enabling the design of solution-processable materials with high performance and programmable functionality. Understanding the thermodynamic and kinetic factors that govern nanocrystal growth is crucial for designing and synthesizing complex materials. This review focuses on the growth mechanisms of nanorod heterostructures, the simplest form of anisotropic nanocrystal heterostructures, and explores the effects of various factors on their growth.
Article
Chemistry, Multidisciplinary
Lipin Chen, Yoan Leger, Gabriel Loget, Mekan Piriyev, Imen Jadli, Sylvain Tricot, Tony Rohel, Rozenn Bernard, Alexandre Beck, Julie Le Pouliquen, Pascal Turban, Philippe Schieffer, Christophe Levallois, Bruno Fabre, Laurent Pedesseau, Jacky Even, Nicolas Bertru, Charles Cornet
Summary: The novel hybrid materials of bi-domain III-V/Si exhibit superior optical properties and efficient carrier collection capabilities, combining the excellent optical properties of semiconductors with the good transport characteristics of metallic materials, while also integrating the high efficiency and tunability of III-V inorganic bulk materials, as well as the flexible management of nano-scale charge carriers commonly found in organic blends.
Review
Physics, Applied
Natalia Kryzhanovskaya, Alexey Zhukov, Eduard Moiseev, Mikhail Maximov
Summary: This review presents the recent advances in III-V microdisk/microring lasers, discussing the basic physics of photonic WGM resonators, laser cavity design, and the advantages and disadvantages of different laser active region types. Furthermore, it addresses key issues such as non-directional emission, high-speed direct modulation, and energy consumption characteristics of WGM microlasers under direct modulation.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Review
Materials Science, Multidisciplinary
Ziyuan Li, Zeyu He, Chenyang Xi, Fanlu Zhang, Longsibo Huang, Yang Yu, Hark Hoe Tan, Chennupati Jagadish, Lan Fu
Summary: In recent years, III-V semiconductor nanowires have been extensively studied for their applications in infrared photodetectors. This is due to their unique properties such as direct and suitable bandgap, flexibility in device design, and ability to grow on foreign substrates with more effective strain relaxation. Vertically aligned and ordered nanowire arrays have emerged as a promising platform for photodetectors, allowing for tailored light absorption and carrier transport properties. This article provides a comprehensive review of the progress in the development of various types of infrared photodetectors based on III-V semiconductor nanowire arrays, including the synthesis/fabrication methods, device performance, and emerging applications. The challenges and future perspectives for the development of low-cost, large-scale, high-performance nanowire array infrared photodetectors are also analyzed.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Multidisciplinary
Quang Nhat Dang Lung, Rafael Jumar Chu, Yeonhwa Kim, Tsimafei Laryn, May Angelu Madarang, Oleksiy Kovalchuk, Yong-Won Song, In-Ho Lee, Changsoon Choi, Won Jun Choi, Daehwan Jung
Summary: High quantum efficiency nanoscale devices face challenges due to carrier loss at the surface. Low dimensional materials like 0D quantum dots and 2D materials have been studied to reduce the loss. In this study, we demonstrate a significant enhancement in photoluminescence from graphene/III-V quantum dot mixed-dimensional heterostructures. The distance between graphene and quantum dots in the hybrid structure determines the degree of radiative carrier recombination enhancement. Time-resolved photoluminescence decay also shows increased carrier lifetimes with decreased distance. The proposed optical enhancement mechanism involves energy band bending and hole carrier transfer, which rebalance the carrier densities in quantum dots. This 2D graphene/0D quantum dot heterostructure shows promise for high performance nanoscale optoelectronic devices.
Article
Materials Science, Multidisciplinary
Mantu K. Hudait, Steven W. Johnston, Michael Meeker, Giti A. Khodaparast
Summary: This work successfully synthesized high-quality and high-carrier lifetime InAs/GaSb heterostructures with atomically smooth interfaces and reduced number of recombination centers. The optical and electrical properties of these materials were characterized using photoluminescence and microwave photoconductivity decay techniques, confirming their high-quality and long lifetime characteristics.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Optics
Luise Rost, Jannik Lehr, Milan Maradiya, Lukas Hellweg, Florian Fillsack, Wolfgang Stolz, Wolfram Heimbrodt
Summary: The study investigated the influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface in type II Ga(As,Sb)/GaAs/(Ga, In)As double quantum well structures. The morphology of the interface layers was analyzed using a highly selective etching technique in combination with atomic force microscopy (AFM), with type II charge transfer recombination used as a sensitive probe. The highest luminescence quantum efficiency was achieved with a 10-second growth interruption and stabilization using both precursor sources for the anion sublattice.
JOURNAL OF LUMINESCENCE
(2021)
Article
Chemistry, Physical
Rachana Yogi, Neeraj K. Jaiswal
Summary: The study compared the sensitivity of Ga, Al, and B based nitride nanoribbons as CS2 scavengers, showing that adsorption at the edges results in metallic properties while adsorption in the middle leads to physisorption. The interaction with CS2 impacts the electronic and transport properties of the nitride nanoribbons, with recovery time significantly longer for edge adsorption and more favorable reusability for center adsorption, useful for designing efficient CS2 scavengers.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Multidisciplinary
Michelle C. Sherrott, William S. Whitney, Deep Jariwala, Souvik Biswas, Cora M. Went, Joeson Wong, George R. Rossman, Harry A. Atwater
Article
Energy & Fuels
Daniel Neves Micha, Oliver Hoehn, Eduard Oliva, Vera Klinger, Andreas W. Bett, Frank Dimroth
PROGRESS IN PHOTOVOLTAICS
(2019)
Article
Optics
Laura Stevens, Nico Tucher, Oliver Hoehn, Hubert Hauser, Claas Mueller, Benedikt Blaesi
Article
Nanoscience & Nanotechnology
M. Niemeyer, P. Kleinschmidt, A. W. Walker, L. E. Mundt, C. Timm, R. Lang, T. Hannappel, D. Lackner
Article
Chemistry, Multidisciplinary
Wei-Hsiang Lin, Wei-Shiuan Tseng, Cora M. Went, Marcus L. Teague, George. R. Rossman, Harry A. Atwater, Nai-Chang Yeh
Article
Energy & Fuels
Hung-Ling Chen, Andrea Cattoni, Romaric De Lepinau, Alexandre W. Walker, Oliver Hohn, David Lackner, Gerald Siefer, Marco Faustini, Nicolas Vandamme, Julie Goffard, Benoit Behaghell, Christophe Dupuis, Nathalie Bardou, Frank Dimroth, Stephane Collin
Article
Engineering, Electrical & Electronic
A. W. Walker, O. J. Pitts, C. Storey, P. Waldron, C. Flueraru
OPTICAL AND QUANTUM ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
Alexandre W. Walker, Amit Shaked, Ronen Dagan, Abraham Kribus, Yossi Rosenwaks, Jens Ohlmann, David Lackner, Frank Dimroth
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2020)
Article
Multidisciplinary Sciences
Cora M. Went, Joeson Wong, Phillip R. Jahelka, Michael Kelzenberg, Souvik Biswas, Matthew S. Hunt, Abigail Carbone, Harry A. Atwater
Article
Chemistry, Physical
Yi-Rung Lin, Wen-Hui Cheng, Matthias H. Richter, Joseph S. DuChene, Elizabeth A. Peterson, Cora M. Went, Zakaria Y. Al Balushi, Deep Jariwala, Jeffrey B. Neaton, Li-Chyong Chen, Harry A. Atwater
JOURNAL OF PHYSICAL CHEMISTRY C
(2020)
Article
Nanoscience & Nanotechnology
Maggie M. Potter, Megan E. Phelan, Pradeep Balaji, Phillip Jahelka, Haley C. Bauser, Rebecca D. Glaudell, Cora M. Went, Michael J. Enright, David R. Needell, Andre Augusto, Harry A. Atwater, Ralph G. Nuzzo
Summary: This study presents the design, fabrication, and characterization of silicon heterojunction microcells, a new type of photovoltaic cell that addresses the challenge of passivating microcell sidewalls to reduce carrier recombination. The synthesis methods, microcell performance, and the influence of edge passivation quality on open-circuit voltage were investigated. The research achieved the highest Si microcell V-oc to date, demonstrated improvements with deposited edge passivation, and outlined a pathway to achieve microcell efficiencies surpassing 15% for specific device sizes.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
A. W. Walker, S. Moisa, A. J. Springthorpe, O. J. Pitts
Summary: This study investigates the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode through numerical simulation and experimental observation. The simulation results show that the local peak value of the electric field near the edge does not significantly increase the photocurrent response, while the experimental results demonstrate a 60% enhancement in the edge response compared to the center response. Simulations of devices with varied multiplication width confirm that the depth enhancement at the edge is consistent with the observed enhancement in photocurrent.
OPTICAL AND QUANTUM ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung-Jae Lee, Claudio Bruschini, Anthony J. SpringThorpe, Alexandre W. Walker, Costel Flueraru, Oliver J. Pitts, Edoardo Charbon
Summary: This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. It achieves a highly uniform active area and demonstrates high photon detection probability, low dark count rate, and timing jitter at 1550nm.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Rubin Ma, Jean Lapointe, Craig Storey, Philip Poole, Frank Jiang, Alireza Seyfollahi, Alexandre W. Walker, Jean-Paul Noel, Alicia Kam, Adam Densmore
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2020)
Proceedings Paper
Energy & Fuels
Benedikt Blaesi, Oliver Hoehn, Hubert Hauser, Nico Tucher, Romain Cariou, Jan Benick, Frank Feldmann, Paul Beutel, David Lackner, Gerald Siefer, Stefan W. Glunz, Andreas W. Bett, Frank Dimroth, Martin Hermle
PHOTONICS FOR SOLAR ENERGY SYSTEMS VII
(2018)
