Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

(2015) H. Carrillo-Nuñez et al.   JOURNAL OF APPLIED PHYSICS

Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

(2015) William R. Wampler et al.   JOURNAL OF APPLIED PHYSICS

Application of the bounds-analysis approach to arsenic and gallium antisite defects in gallium arsenide

(2015) A. F. Wright et al.   PHYSICAL REVIEW B

Analytic Results in the Position-Dependent Mass Schrödinger Problem

(2014) M.S. Cunha et al.   COMMUNICATIONS IN THEORETICAL PHYSICS

Modeling direct interband tunneling. II. Lower-dimensional structures

(2014) Andrew Pan et al.   JOURNAL OF APPLIED PHYSICS

Modeling direct interband tunneling. I. Bulk semiconductors

(2014) Andrew Pan et al.   JOURNAL OF APPLIED PHYSICS

Field dependent emission rates in radiation damaged GaAs

(2014) R. M. Fleming et al.   JOURNAL OF APPLIED PHYSICS

First-principles theory of nonradiative carrier capture via multiphonon emission

(2014) Audrius Alkauskas et al.   PHYSICAL REVIEW B

Ab initioCalculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors

(2012) Lin Shi et al.   PHYSICAL REVIEW LETTERS

Simple intrinsic defects in gallium arsenide

(2009) Peter A Schultz et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING