期刊
NANO LETTERS
卷 22, 期 12, 页码 4792-4799出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c01066
关键词
Flexoelectricity; HZO thin film; Mechanical switching; PFM
类别
资金
- National Key Research and Development Program of China [2017YFA0303403]
- National Natural Science Foundation of China [12074119, 11874149, 12134003]
- Shanghai Science and Technology Innovation Action Plan [19JC1416700]
- Natural Science Foundation of Shanghai [20ZR1418300]
- ECNU (East China Normal University) Multifunctional Platform for Innovation [006]
- Fundamental Research Funds for the Central Universities
- Major Scientific Research Project of Zhejiang Lab [2021MD0AC01]
The study demonstrates the formation of out-of-plane domains in Hf0.5Zr0.5O2 (HZO) ferroelectric films through mechanical writing, enabling wider flexoelectric applications and ultrahigh-density storage.
HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is rarely reported in HfO2-based films. Here, we demonstrate that the mechanically written out-of-plane domains are obtained in 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric film at room temperature by generating the stress gradient via the tip of an atomic force microscope. The results of scanning Kelvin force microscopy (SKPM) exclude the possibility of flexoelectric-like mechanisms and prove that charge injection could be avoided by mechanical writing and thus reveal the true polarization state, promoting wider flexoelectric applications and ultrahigh-density storage of HZO thin films.
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