4.7 Article

Construction of ZnTe nanowires/Si p-n heterojunctions for electronic and optoelectronic applications

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 661, 期 -, 页码 231-236

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.11.164

关键词

ZnTe nanowires; P-n heterojunction; Junction field-effect transistors; Photoresponse

资金

  1. National Natural Science Foundation of China [61176044, 11504331]
  2. Educational Department of Henan Province [15A140040, 15A430048]

向作者/读者索取更多资源

Nitrogen-doped p-type ZnTe nanowires (NWs) were successfully synthesized by chemical vapor deposition (CVD) method. Metal-oxide-semiconductor field-effect transistors (MOSFETs) based on ZnTe NWs and junction field-effect transistors (JFETs) based on ZnTe NW/Si p-n heterojunction were constructed and their devices performances were studied. Compared with MOSFETs, JFETs exhibits greatly enhanced device performances in various aspects, such as the transconductance (g(m)) and I-on/I-off ratio were increased to 1.81 mu S and similar to 10(2), and the subthreshold swing (S) and threshold voltage were reduced to 8.4 V dec(-1) and 2 V, respectively. Moreover, ZnTe NW/Si p-n heterojunctions show excellent rectifying characteristics with rectification ratio up to 10(4) within +/- 5 V and very fast response time of 27.4/85.1 mu s to varying optical signal, which is much shorter than that reported before, representing the fastest response for ZnTe based nano-photodetectors. These results demonstrate that ZnTe NW/Si p-n heterojunctions have great potential in nano-electronic and optoelectronic applications. (C) 2015 Elsevier B.V. All rights reserved.

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