Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors

The investigation of two-dimensional (2D) materials has advanced into practical device applications, such as cascaded logic stages. However, incompatible electrical properties and inappropriate logic levels remain enormous challenges. In this work, a doping-free strategy is investigated by top gated (TG) MoS2 field-effect transistors (FETs) using various metal gates (Au, Cu, Ag, and Al). These metals with different work functions provide a convenient tuning knob for controlling threshold voltage (Vth) for MoS2 FETs. For instance, the Al electrode can create an extra electron doping (n-doping) behavior in the MoS2 TG-FETs due to a dipole effect at the gate-dielectric interface. In this work, by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit, we successfully demonstrate wafer-scale MoS2 inverter arrays with an optimized inverter switching threshold voltage (V-M) of 1.5 V and a DC voltage gain of 27 at a supply voltage (V-DD) of 3 V. This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS2 film. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Automated summary

This study investigates a doping-free strategy using top-gated MoS2 field-effect transistors with various metal gates. Different metals with different work functions provide a convenient tuning knob for controlling the threshold voltage of the MoS2 FETs. By achieving matched electrical properties for load and driver transistors in an inverter circuit, wafer-scale MoS2 inverter arrays with optimized switching threshold voltage and voltage gain were successfully demonstrated.