期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 897, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.163197
关键词
GO-assisted solvothermal method; RGO-MoSe2; RGO-MoSe2/g-C3N4 composite; 3D/2D hierarchical structure; Z-scheme heterojunction
资金
- National Natural Science Foundation of China [21376099, 21878115]
- Guangdong Basic and Applied Basic Research Foundation [2021A1515010245]
Transition-metal dichalcogenides (TMDs) exhibit promising photocatalytic performance for degrading contaminants, but limited active sites and poor carrier mobility are the main challenges. In this study, a 3D/2D hierarchical structure rGO-MoSe2/g-C3N4 composite was successfully synthesized and showed high photocatalytic degrading efficiency towards RhB under simulated solar light.
The transition-metal dichalcogenides (TMDs) is a promising photocatalyst for degrading contaminant, while limited active sites and poor carrier mobility are the primary challenges for improving photocatalytic degrading efficiencies in both bare TMDs and TMDs-based photocatalysts. A rGO-MoSe2 composite with 3D network hierarchical structure was fabricated by the GO-assisted solvothermal method. And then rGO-MoSe2/g-C3N4 3D/2D hierarchical structures were constructed by combining rGO-MoSe2 with g-C3N4 nanosheets. The optimal rGO-MoSe2/g-C3N4 composite exhibited the highest photocatalytic degrading rate of 97.4% towards RhB under simulated solar light, and its pseudo-first-order apparent rate constant (k) was 0.0715 min(-1), being 5.9 and 12.5-folds higher than that of MoSe2/g-C3N4 (0.0121 min(-1)) and bare g-C3N4 (0.00573 min(-1)), respectively. The 3D/2D hierarchical structure endow rGO-MoSe2/g-C3N4 composite with the improved light-harvesting and abundant active sites, supported by the DRS and BET analyses. And rGO nanosheets could act as efficient transfer and separation channels for electron-hole pairs between MoSe2/g-C3N4, confirmed through the photocurrent response and EIS tests. According to the results of DRS spectra and Mott-Schottky plots, the spatial behavior of photo-induced carriers at interface of rGO-MoSe2/g-C3N4 would comply to a Z-scheme transfer pathway under the synergy effects of the internal electric field and band bending. (C) 2021 Elsevier B.V. All rights reserved.
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