Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect

标题
Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 4, Pages 1864-1869
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2022-03-02
DOI
10.1109/ted.2022.3151720

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