High-sensitivity extended-gate field-effect transistors as pH sensors with oxygen-modified reduced graphene oxide films coated on different reverse-pyramid silicon structures as sensing heads

标题
High-sensitivity extended-gate field-effect transistors as pH sensors with oxygen-modified reduced graphene oxide films coated on different reverse-pyramid silicon structures as sensing heads
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 4S, Pages 04EM08
出版商
Japan Society of Applied Physics
发表日期
2016-03-18
DOI
10.7567/jjap.55.04em08

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