期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 55, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.55.1202BC
关键词
-
In this study, epitaxial epsilon-Ga2O3 thin films are successfully grown on cubic (111) MgO and (111) yttria-stablized zirconia (YSZ) substrates by mist chemical vapor deposition. Pure-phase hexagonal epsilon-Ga(2)O(3)thin films are grown on the two substrates with a c-axis orientation determined by X-ray diffraction (XRD) 2 theta-omega scanning. XRD pole figure measurements reveal that the in-plane orientation relationship between the (0001) of epsilon-Ga2O3 and the (111) of the two substrates is epsilon-Ga2O3 [1010] parallel to substrates [(1) over bar(1) over bar2] Using (111) MgO substrates with a 2.5% lattice mismatch, the epitaxial epsilon-Ga2O3 films are successfully grown at a low temperature of 400 degrees C. The optical direct and indirect bandgaps of pure epsilon-Ga2O3 thin films are estimated as 5.0 and 4.5 eV, respectively. (C) 2016 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据