300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology

标题
300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 4S, Pages 04EB10
出版商
Japan Society of Applied Physics
发表日期
2016-03-24
DOI
10.7567/jjap.55.04eb10

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