Electric field and strain induced gap modifications in multilayered GaN

Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects

(2020) K. H. Yeoh et al.   JOURNAL OF APPLIED PHYSICS

Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering

(2020) Yao Cai et al.   APL Materials

Quantum ESPRESSO toward the exascale

(2020) Paolo Giannozzi et al.   JOURNAL OF CHEMICAL PHYSICS

Giant excitonic absorption and emission in two-dimensional group-III nitrides

(2020) Maria Stella Prete et al.   Scientific Reports

Thermomechanical Nanostraining of Two-Dimensional Materials

(2020) Xia Liu et al.   NANO LETTERS

Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

(2020) Yuping Jia et al.   npj 2D Materials and Applications

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

(2020) Zhiwei Peng et al.   Light-Science & Applications

Strain Engineering in 2D Material‐Based Flexible Optoelectronics

(2020) Junli Du et al.   Small Methods

Electronic properties and atomic structure of Mg-doped multilayer g-GaN base on first-principles

(2020) Lei Liu et al.   APPLIED SURFACE SCIENCE

Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN

(2019) Ping Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Effects of strain and surface modification on stability, electronic and optical properties of GaN monolayer

(2019) Huabing Shu et al.   APPLIED SURFACE SCIENCE

Large-scale benchmark of exchange-correlation functionals for the determination of electronic band gaps of solids

(2019) Pedro Borlido et al.   Journal of Chemical Theory and Computation

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

(2019) Hao Tian et al.   Advanced Materials Interfaces

Kinetics of epitaxial formation of nanostructures by Frank–van der Merwe, Volmer–Weber and Stranski–Krastanow growth modes

(2019) Kirill A. Lozovoy et al.   SURFACE & COATINGS TECHNOLOGY

Vacancy charged defects in two-dimensional GaN

(2018) Roberto González et al.   APPLIED SURFACE SCIENCE

Magnetism in non-metal atoms adsorbed graphene-like gallium nitride monolayers

(2018) Wencheng Tang et al.   APPLIED SURFACE SCIENCE

Piezoelectric effect on the thermal conductivity of monolayer gallium nitride

(2018) Jin Zhang   JOURNAL OF APPLIED PHYSICS

A theoretical study on the metal contacts of monolayer gallium nitride (GaN)

(2018) Rui Sun et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties

(2018) Zhen Cui et al.   Nanoscale Research Letters

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

(2018) Huabing Shu et al.   Journal of Materials Chemistry C

Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties

(2018) Zhen Cui et al.   Nanoscale Research Letters

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

(2018) D. Kecik et al.   Applied Physics Reviews

Strain engineering in two-dimensional nanomaterials beyond graphene

(2018) Shikai Deng et al.   Nano Today

Room-Temperature Bound Exciton with Long Lifetime in Monolayer GaN

(2018) Bo Peng et al.   ACS Photonics

Tunable Electric Properties of Bilayer α-GeTe with Different Interlayer Distances and External Electric Fields

(2018) Dingbo Zhang et al.   Nanoscale Research Letters

Electronic and Optical Properties of Two-Dimensional GaN from First-Principles

(2017) Nocona Sanders et al.   NANO LETTERS

Janus monolayers of transition metal dichalcogenides

(2017) Ang-Yu Lu et al.   Nature Nanotechnology

Electronic and excitonic properties of two-dimensional and bulk InN crystals

(2017) Dan Liang et al.   RSC Advances

Electric field-modulated data storage in bilayer InSe

(2017) Xuhui Yang et al.   Journal of Materials Chemistry C

Electric Field Effect in Two-Dimensional Transition Metal Dichalcogenides

(2016) Fucai Liu et al.   ADVANCED FUNCTIONAL MATERIALS

Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides

(2016) Haichang Lu et al.   JOURNAL OF APPLIED PHYSICS

Two-dimensional gallium nitride realized via graphene encapsulation

(2016) Zakaria Y. Al Balushi et al.   NATURE MATERIALS

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

(2016) Kin Fai Mak et al.   Nature Photonics

Recent Advances in Two-Dimensional Materials beyond Graphene

(2015) Ganesh R. Bhimanapati et al.   ACS Nano

Hydrogenated arsenenes as planar magnet and Dirac material

(2015) Shengli Zhang et al.   APPLIED PHYSICS LETTERS

Chemical Functionalization of GaN Monolayer by Adatom Adsorption

(2015) Yuewen Mu   Journal of Physical Chemistry C

Electric field induced gap modification in ultrathin blue phosphorus

(2015) Barun Ghosh et al.   PHYSICAL REVIEW B

Tuning the electronic structure of silicene and germanene by biaxial strain and electric field

(2015) Jia-An Yan et al.   PHYSICAL REVIEW B

Layer- and strain-dependent optoelectronic properties of hexagonal AlN

(2015) D. Kecik et al.   PHYSICAL REVIEW B

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

Computational synthesis of single-layer GaN on refractory materials

(2014) Arunima K. Singh et al.   APPLIED PHYSICS LETTERS

Perspective: Fifty years of density-functional theory in chemical physics

(2014) Axel D. Becke   JOURNAL OF CHEMICAL PHYSICS

Tuning Electronic Properties of Germanane Layers by External Electric Field and Biaxial Tensile Strain: A Computational Study

(2014) Yafei Li et al.   Journal of Physical Chemistry C

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Commensurate–incommensurate transition in graphene on hexagonal boron nitride

(2014) C. R. Woods et al.   Nature Physics

Ab initiosynthesis of single-layer III-V materials

(2014) Arunima K. Singh et al.   PHYSICAL REVIEW B

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

(2014) Vy Tran et al.   PHYSICAL REVIEW B

Strain-Induced Gap Modification in Black Phosphorus

(2014) A. S. Rodin et al.   PHYSICAL REVIEW LETTERS

Elemental Analogues of Graphene: Silicene, Germanene, Stanene, and Phosphorene

(2014) Sivacarendran Balendhran et al.   Small

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

(2013) Sheneve Z. Butler et al.   ACS Nano

Two-dimensional excitons in three-dimensional hexagonal boron nitride

(2013) X. K. Cao et al.   APPLIED PHYSICS LETTERS

Bandgap engineering of rippled MoS2 monolayer under external electric field

(2013) Jingshan Qi et al.   APPLIED PHYSICS LETTERS

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

(2013) Sarah L. Howell et al.   NANO LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Computational discovery of single-layer III-V materials

(2013) Houlong L. Zhuang et al.   PHYSICAL REVIEW B

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

Electronic structures of silicene fluoride and hydride

(2012) Yi Ding et al.   APPLIED PHYSICS LETTERS

Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications

(2012) Vasilios Georgakilas et al.   CHEMICAL REVIEWS

Perspective on density functional theory

(2012) Kieron Burke   JOURNAL OF CHEMICAL PHYSICS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

Tightly bound trions in monolayer MoS2

(2012) Kin Fai Mak et al.   NATURE MATERIALS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Strain-engineered artificial atom as a broad-spectrum solar energy funnel

(2012) Ji Feng et al.   Nature Photonics

Effects of strain on band structure and effective masses in MoS2

(2012) H. Peelaers et al.   PHYSICAL REVIEW B

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

Electrical control of optical properties of monolayer MoS2

(2012) A.K.M. Newaz et al.   SOLID STATE COMMUNICATIONS

InGaN Solar Cells: Present State of the Art and Important Challenges

(2012) Ashraful Ghani Bhuiyan et al.   IEEE Journal of Photovoltaics

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Tailoring band gap in GaN sheet by chemical modification and electric field: Ab initio calculations

(2011) Qian Chen et al.   APPLIED PHYSICS LETTERS

Challenges for Density Functional Theory

(2011) Aron J. Cohen et al.   CHEMICAL REVIEWS

Tunable Bandgap in Silicene and Germanene

(2011) Zeyuan Ni et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

Stabilizing Graphitic Thin Films of Wurtzite Materials by Epitaxial Strain

(2011) Dangxin Wu et al.   PHYSICAL REVIEW LETTERS

InGaN/GaN multiple quantum well concentrator solar cells

(2010) R. Dahal et al.   APPLIED PHYSICS LETTERS

Controlling Energy Gap of Bilayer Graphene by Strain

(2010) Seon-Myeong Choi et al.   NANO LETTERS

Probing Strain-Induced Electronic Structure Change in Graphene by Raman Spectroscopy

(2010) Mingyuan Huang et al.   NANO LETTERS

Bandgap opening in graphene induced by patterned hydrogen adsorption

(2010) Richard Balog et al.   NATURE MATERIALS

Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

(2010) Martin Magnuson et al.   PHYSICAL REVIEW B

Gap opening in graphene by shear strain

(2010) Giulio Cocco et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

InGaN laser diodes with 50 mW output power emitting at 515 nm

(2009) Adrian Avramescu et al.   APPLIED PHYSICS LETTERS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

(2009) T. M. G. Mohiuddin et al.   PHYSICAL REVIEW B

Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations

(2009) H. Şahin et al.   PHYSICAL REVIEW B

Subjecting a Graphene Monolayer to Tension and Compression

(2009) Georgia Tsoukleri et al.   Small

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Band structure engineering of graphene by strain: First-principles calculations

(2008) Gui Gui et al.   PHYSICAL REVIEW B

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

(2008) C. Lee et al.   SCIENCE