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Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

期刊

ADVANCED MATERIALS
卷 35, 期 27, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202109894

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2D materials; quantum computing; quantum tunneling devices; spintronics; valleytronics

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Band theory has contributed significantly to the development of modern integrated solid-state electronics, but the increasing energy consumption and environmental issues require the exploration of more efficient electronic and optoelectronic technologies. The emerging 2D layered materials provide a revolutionary platform and opportunities for quantum-engineered devices with their unique low-dimensional manufacturing capabilities.
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.

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