Sub-Band Filling, Mott-like Transitions, and Ion Size Effects in C60 Single Crystal Electric Double Layer Transistors

标题
Sub-Band Filling, Mott-like Transitions, and Ion Size Effects in C60 Single Crystal Electric Double Layer Transistors
作者
关键词
-
出版物
ACS Nano
Volume 16, Issue 3, Pages 4823-4830
出版商
American Chemical Society (ACS)
发表日期
2022-03-04
DOI
10.1021/acsnano.2c00222

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