期刊
2D MATERIALS
卷 9, 期 1, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1583/ac2e51
关键词
MoS2; hexagonal BN; 2D heterostructure; thermal conductivity; thermal interface conductance
资金
- European Union under the H2020 FET-OPEN NANOPOLY [GA 289061]
- Spanish Ministry of Science [PGC2018-101743-B-I00, PGC2018-094490-B-C22, FIS2017-85787-R, PID2019-111773RB- I00/AEI/10.13039/501100011033, JC-2015-25201, RYC2019-027879-I]
- Ramon y Cajal fellowships [RYC2014-15392, RYC2019-028368-I/AEI/10.13039/501100011033]
- Agencia Estatal de Investigacion [103739]
- Severo Ochoa program from Spanish MINECO [SEV-2017-0706]
- Elemental Strategy Initiative by the MEXT, Japan [JPMXP0112101001]
- JSPS KAKENHI [19H05790, JP20H00354]
State-of-the-art fabrication and characterisation techniques were used to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. The results showed that the heterostructure exhibited a significantly increased thermal conductivity due to the high thermal interface conductance between MoS2 and hBN, as well as the efficient in-plane heat spreading driven by hBN.
State-of-the-art fabrication and characterisation techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power. Measurements on MoS2 layers with thicknesses of 5 and 14 nm exhibit thermal conductivity in the range between 12 Wm(-1) K-1 and 24 Wm(-1) K-1. Additionally, after determining the thermal conductivity of the latter MoS2 sample, an hBN flake was transferred onto it and the effective thermal conductivity of the heterostructure was subsequently measured. Remarkably, despite that the thickness of the hBN layer was less than a hal of the thickness of the MoS2 layer, the heterostructure showed an almost eight-fold increase in the thermal conductivity, being able to dissipate more than ten times the laser power without any visible sign of damage. These results are consistent with a high thermal interface conductance G between MoS2 and hBN and an efficient in-plane heat spreading driven by hBN. Indeed, we estimate G similar to 70 MW m(-2) K-1 for hBN layer thermal conductivity of 450 Wm(-1) K-1 which is significantly higher than previously reported values. Our work therefore demonstrates that the insertion of hBN layers in potential MoS2-based devices holds the promise for efficient thermal management.
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